logo

FDMC86248 Datasheet, Fairchild Semiconductor

FDMC86248 mosfet equivalent, n-channel power trench mosfet.

FDMC86248 Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 266.40KB)

FDMC86248 Datasheet
FDMC86248
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 266.40KB)

FDMC86248 Datasheet

Features and benefits


* Max rDS(on) = 90 mΩ at VGS = 10 V, ID = 3.4 A
* Max rDS(on) = 125 mΩ at VGS = 6 V, ID = 2.9 A
* Advanced Package and Silicon combination for low rDS(on) and.

Application


* Primary MOSFET
* MV synchronous rectifier Top Bottom S Pin 1 S S S G S S D D D G D D D D D Power 33 MOSFE.

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Applications
* Primary MOSFET.

Image gallery

FDMC86248 Page 1 FDMC86248 Page 2 FDMC86248 Page 3

TAGS

FDMC86248
N-Channel
Power
Trench
MOSFET
Fairchild Semiconductor

Manufacturer


Fairchild Semiconductor

Related datasheet

FDMC86240

FDMC86244

FDMC86244-L701

FDMC8622

FDMC86259P

FDMC86260

FDMC86260ET150

FDMC86261P

FDMC86262P

FDMC86265P

FDMC86012

FDMC86102

FDMC86102L

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts